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| SKM 800GA176D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANSTM 4 Trench IGBT Modules SKM 800GA176D Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Preliminary Data Features Typical Applications Inverse diode Remarks Thermal characteristics Mechanical data GA 1 13-09-2005 RAA (c) by SEMIKRON SKM 800GA176D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 13-09-2005 RAA (c) by SEMIKRON SKM 800GA176D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 10 Transient thermal impedance of Inverse CAL Diode Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 13-09-2005 RAA (c) by SEMIKRON SKM 800GA176D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 13-09-2005 RAA (c) by SEMIKRON |
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